Atomic Number of Silicon is 14.

Atomic number and mass number are always whole numbers because they are obtained by counting whole objects (protons, neutrons, and electrons). The sum of the mass number and the atomic number for an atom (A-Z) corresponds to the total number of subatomic particles present in the atom. Silicon atom is a carbon group element atom, a nonmetal atom and a metalloid atom. Silicon is under investigation in clinical trial NCT00103246 (Photodynamic Therapy Using Silicon Phthalocyanine 4 in Treating Patients With Actinic Keratosis, Bowen's Disease, Skin Cancer, or Stage I. The atomic number density of isotope i is i i elem i i i M N M N N A A (9) Clearly, if the material is enriched, then the atomic weight of the material differs from its natural reference value, and the enriched atomic weight, if needed, should be computed from i i i Melem M 1 (10) Example: Find the U-235 concentration for 4% enriched UO2.

Chemical symbol for Silicon is Si. Number of protons in Silicon is 14. Atomic weight of Silicon is 28.085 u or g/mol. Melting point of Silicon is 1410 °C and its the boiling point is 2355 °C.

» Boiling Point» Melting Point» Abundant» State at STP» Discovery Year

About Silicon

Silicon is a typical example of metalloid, or the substance which looks like metal but does not have its properties. Its name came from the Latin word for flint, and in its pure form it looks like dark-blue metal. There is abundance of this chemical element on our planet, i.e. we can see it in the form of sand on beaches, or in the forms of various silicates. Silicon is considered to be one of the most useful metals for humanity since its alloys and chemical compounds have a large variety of useful properties. They are used, for example, for producing engines, transformers, various tools, popes, elements of roofs and windows, etc. Pure silicon is used for producing glass. As a very good semi-conductor, silicon is used for producing microelectronics, especially computers, laptops, etc.

Properties of Silicon Element

Atomic Number (Z)	14
Atomic Symbol	Si
Group	14
Period	3
Atomic Weight	28.085 u
Density	2.3296 g/cm3
Melting Point (K)	1687 K
Melting Point (℃)	1410 °C
Boiling Point (K)	3538 K
Boiling Point (℃)	2355 °C
Heat Capacity	0.705 J/g · K
Abundance	282000 mg/kg
State at STP	Solid
Occurrence	Primordial
Description	Metalloid
Electronegativity (Pauling) χ	1.9
Ionization Energy (eV)	8.15169
Atomic Radius	110pm
Covalent Radius	111pm
Van der Waals Radius	210
Valence Electrons	4
Year of Discovery	1824
Discoverer	Berzelius

What is the Boiling Point of Silicon?

Silicon boiling point is 2355 °C. Boiling point of Silicon in Kelvin is 3538 K.

What is the Melting Point of Silicon?

Silicon melting point is 1410 °C. Melting point of Silicon in Kelvin is 1687 K.

How Abundant is Silicon?

Abundant value of Silicon is 282000 mg/kg.

What is the State of Silicon at Standard Temperature and Pressure (STP)?

State of Silicon is Solid at standard temperature and pressure at 0℃ and one atmosphere pressure.

When was Silicon Discovered?

Silicon was discovered in 1824.

Silicon, Si:
The most common semiconductor, atomic number 14, energy gap Eg= 1.12 eV- indirect bandgap; crystal structure- diamond, lattice constant 0.543 nm, atomic concentration 5 x 10²² atoms/cm^-3, index of refraction 3.42, density 2.33 g/cm³, dielectric constant 11.7, intrinsic carrier concentration 1.02 x 10¹⁰ cm^-3, mobility of electrons and holes at 300°K: 1450 and 500 cm²/V-s, thermal conductivity 1.31 W/cm°C, thermal expansion coefficient 2.6 x 10^-6°C^-1, melting point 1414°C; excellent mechanical properties (MEMS applications); single crystal Si can be processed into wafers up to 300mm in diameter.
P type= Always Boron (B) Doped
N type= Dopant typically as follows:
Res: .001-.005 Arsenic (As)
Res: .005-.025 Antimony (Sb)
Res: >.1 Phosphorous (P)
Wafer Flats:
Purpose and Function

1. Orientation for automatic equipment
2. Indicate type and orientation of crystal

Atomic No Of Silicon Powder

Primary Flat = The flat of longest length located in the circumference of the wafer. The primary flat has a specified crystal orientation relative to the wafer surface; major flat.
Secondary Flat = Indicates the crystal orientation and doping of the wafer. The location of this flat varies.
P type <111> No secondary Flat
P type <100> 90°±5° Clockwise from Primary Flat
N type <111> 45°±5° Clockwise from Primary Flat
N type <100> 180°±5° Clockwise from Primary Flat
Cleaving:

• Using a diamond scribe
• Cleaves will run according to the following crystal orientations for Silicon:
• If the crystal orientation of the Si is <100> the cleaved pieces form rectangles (cleave at 90 deg. angles).
  
• If the crystal orientation of the Si is <111> the cleaved pieces form triangles (cleave at 60 deg. angles). <111> material has triangular crystal structure. You have to scribe up through the base of the triangle, as opposed to the vertex of the triangle, so orientation is important. Usually, this is delineated by a flat along the 110 plane. Cleaving samples on <111> wafers for SEM imaging can be difficult.
  

Crystal Planes in Semiconductors

Miller Indices

Atomic No Of Silicon And Germanium

:

Silicon Atomic Structure

All lattice planes and lattice directions are described by mathematical description known as a Miller Index. This allows the specification, investigation, and discussion of specific planes and directions of a crystal. In the cubic lattice system, the direction [hkl] defines a vector direction normal to surface of a particular plane or facet. The Miller Indices h,k,l are defined as follows:

type: <100> Equivalent directions: [100],[010],[001]

type: <110> Equivalent directions: [110],[011],[101], [-1-10],[0-1-1],[-10-1], [-110],[0-11],[-101], [1-10],[01-1],[10-1]

type: <111> Equivalent directions: [111],[-111],[1-11],[11-1]

Atomic No Of Silicon Dioxide

• Silicon on Insulator (SOI):
• Only a thin layer on the surface of a silicon wafer is used for making electronic components; the rest serves essentially as a mechanical support. The role of SOI is to electronically insulate a fine layer of monocrystalline silicon from the rest of the silicon wafer. Integrated circuits can then be fabricated on the top layer of the SOI wafers using the same processes as would be used on plain silicon wafers. The embedded layer of insulation enables the SOI-based chips to function at significantly higher speeds while reducing electrical losses. The result is an increase in performance and a reduction in power consumption. There are two types of SOI wafers. Thin film SOI wafers have a device layer <1.5 µm and thick film wafers have a device layer >1.5 µm.


• Wafer bonding. - In this process the surface of two wafers are coated with an insulating layer (usually oxide). The insulating layers are then bonded together in a furnace creating one single wafer with a buried oxide layer (BOX) sandwiched between layers of semiconductor. The top of the wafer is then lapped and polished until a desired thickness of semiconductor above the BOX is achieved.


• SIMOX - Seperation by Implantation of Oxide. In this process a bulk semiconductor wafer is bombarded with oxygen ions, crating a layer of buried oxide. The thickness of intrinsic semiconducor above the box is determined by the ion energy. An anneal reinforces Si-O bonds in the BOX.


• Smart Cut - The wafer bonding method is used to form the BOX, but instead of lapping off excess semiconducor (which is wasteful) a layer of hydrogen is implanted to a depth specifying the desired active layer of semiconductor. An anneal at ~500°C splits the wafer along the stress plane created by the implanted hydrogen. The split wafer may then be reused to form other SiO wafers.




• III-V Semiconductors:
• Gallium Arsenide, GaAs - After silicon, the second most common semiconductor, energy gap Eg = 1.43 eV, direct bandgap; crystal structure - zinc blend, lattice constant 5.65 Ang., index of refraction 3.3, density 5.32 g/cm³, dielectric constant 12.9, intrinsic carrier concentration 2.1 x 10⁶ cm^-3, mobility of electrons and holes at 300°K - 8500 and 400 cm²/V-s, thermal conductivity 0.46 W/cm°C, thermal expansion coefficient 6.86 x 10^-6 °C^-1; thermally unstable above 600°C due to As evaporation; does not form sufficient quality native oxide; mechanically fragile; due to direct bandgap commonly used to fabricate light emitting devices; due to higher electron and hole mobilities, also foundation of the variety of high-speed electronic devices; bandgap can be readily engineered by forming ternary compounds based on GaAs, e.g. AlGaAs.
• Gallium Nitride, GaN - wide bandgap III-V semiconductor withdirect bandgap 3.5 eV wide; among very few semiconductors capable of generating blue radiation, GaN is used for blue LEDs and lasers; intrinsically n-type semiconductor but can be doped p-type; GaN is formed as an epitaxial layer; Lattice mismatch remains a problem, creating a high defect density. Incorporation of Indium (InxGa1-xN) allows control of emission from green to violet (high and low In content respectively). GaN can also be used in UV detectors that do not respond to visible light. GaN has a Wurtzite(W) or Zinc Blend(ZB) crystal structure. Lattice constant [A] 3.189(W) 5.186(ZB); Density[g/cm³] 6.15(W) 6.15(ZB); Atomic concentration [cm^-3] 8.9 x 10²²(W) 8.9 x 10²²(ZB); Melting point [°C] 2,500(W) 2,500(ZB); Thermal conduct.[W/cm °C] 1.3(W) 1.3(W); Thermal expansion coefficient[°C^-1] ~1x10^-6; Dielectric constant (static) 8.9(W) 9.7(ZB); Refractive index 2.4(W) 2.3(ZB);
• GaP - Crystal structure zinc blend; Lattice constant [A] 5.45; Density [g/cm³] 4.14; Atomic concentration [cm^-3] 4.94 x 10²²; Melting point [°C] 1457; Thermal conductivity [W/cm °C] 1.1; Thermal expansion coefficient[1/°C] 4.65x10^-6; Dielectric constant 11.1; Refractive index 3.02; Energy gap [eV] 2.26; Type of energy gap: direct; Electron mobility [cm²/V sec] 250; Hole mobility [cm²/V sec] 150;